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WNSC6D10650B6J
Part number：
WNSC6D10650B6J
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
WeEn Semiconductors
describe：
DIODE SIL CARBIDE 650V 10A D2PAK
sales volume：
0
package：
Tape & Reel (TR)
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 0
minimum : 3200
quantity
unit price
price
3200
1.125
3600
specifications
  • Part Status
    Active
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    D2PAK
  • Speed
    No Recovery Time > 500mA (Io)
  • Technology
    SiC (Silicon Carbide) Schottky
  • Current - Reverse Leakage @ Vr
    50 µA @ 650 V
  • Voltage - DC Reverse (Vr) (Max)
    650 V
  • Current - Average Rectified (Io)
    10A
  • Voltage - Forward (Vf) (Max) @ If
    1.45 V @ 10 A
  • Capacitance @ Vr, F
    500pF @ 1V, 1MHz
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Reverse Recovery Time (trr)
    0 ns
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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