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VS-4C10ET07T-M3
Part number：
VS-4C10ET07T-M3
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Vishay General Semiconductor - Diodes Division
describe：
RECTIFIER, SILICON CARBIDE, 650V
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 0
minimum : 1
quantity
unit price
price
1
3.15
3.15
10
2.045
20.45
100
1.4175
141.75
500
1.14912
574.56
1000
1.06289
1062.89
2000
0.9904
1980.8
5000
0.97812
4890.6
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-2
  • Supplier Device Package
    TO-220AC
  • Speed
    No Recovery Time > 500mA (Io)
  • Technology
    SiC (Silicon Carbide) Schottky
  • Current - Reverse Leakage @ Vr
    80 µA @ 650 V
  • Voltage - DC Reverse (Vr) (Max)
    650 V
  • Current - Average Rectified (Io)
    10A
  • Voltage - Forward (Vf) (Max) @ If
    1.5 V @ 10 A
  • Capacitance @ Vr, F
    440pF @ 1V, 1MHz
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Reverse Recovery Time (trr)
    0 ns
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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