collect compare
VS-4C06ET07T-M3
Part number：
VS-4C06ET07T-M3
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Vishay General Semiconductor - Diodes Division
describe：
RECTIFIER, SILICON CARBIDE, 650V
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 0
minimum : 1
quantity
unit price
price
1
2.51
2.51
10
1.617
16.17
100
1.1061
110.61
500
0.88752
443.76
1000
0.81725
817.25
2000
0.75818
1516.36
5000
0.71838
3591.9
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-2
  • Supplier Device Package
    TO-220AC
  • Speed
    No Recovery Time > 500mA (Io)
  • Technology
    SiC (Silicon Carbide) Schottky
  • Current - Reverse Leakage @ Vr
    60 µA @ 650 V
  • Voltage - DC Reverse (Vr) (Max)
    650 V
  • Current - Average Rectified (Io)
    6A
  • Voltage - Forward (Vf) (Max) @ If
    1.5 V @ 6 A
  • Capacitance @ Vr, F
    266pF @ 1V, 1MHz
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Reverse Recovery Time (trr)
    0 ns
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

{{ boxName }} ({{ dataList?.length || 0 }} Items)

{{ val.part_number }}

{{ val.manufacturer || val.en_manufacturer || '' }}

quantity: {{ val.quantity }}

submit

it was empty.