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TW027U65C,RQ
Part number：
TW027U65C,RQ
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Toshiba Semiconductor and Storage
describe：
N-CH SIC MOSFET, 650 V, 0.027 (T
sales volume：
0
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 0
minimum : 1
quantity
unit price
price
1
39.79
39.79
10
32.91
329.1
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    175°C
  • Package / Case
    8-PowerSFN
  • Supplier Device Package
    TOLL
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V
  • Rds On (Max) @ Id, Vgs
    40mOhm @ 29A, 18V
  • Vgs(th) (Max) @ Id
    5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs
    65 nC @ 18 V
  • Vgs (Max)
    +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    2288 pF @ 400 V
  • Power Dissipation (Max)
    156W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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