collect compare
TP65H300G4LSGB-TR
Part number：
TP65H300G4LSGB-TR
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Transphorm
describe：
GANFET N-CH 650V 6.5A QFN8X8
sales volume：
0
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 2782
minimum : 1
quantity
unit price
price
1
4.18
4.18
10
2.751
27.51
100
1.9386
193.86
500
1.7595
879.75
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    8-VDFN Exposed Pad
  • Supplier Device Package
    8-PQFN (8x8)
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    6V
  • Rds On (Max) @ Id, Vgs
    312mOhm @ 6.5A, 6V
  • Vgs(th) (Max) @ Id
    2.8V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs
    8.8 nC @ 10 V
  • Vgs (Max)
    ±12V
  • Input Capacitance (Ciss) (Max) @ Vds
    730 pF @ 400 V
  • Power Dissipation (Max)
    21W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

{{ boxName }} ({{ dataList?.length || 0 }} Items)

{{ val.part_number }}

{{ val.manufacturer || val.en_manufacturer || '' }}

quantity: {{ val.quantity }}

submit

it was empty.