collect compare
TP65H100G4PS
Part number：
TP65H100G4PS
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Transphorm
describe：
Hi Volt FETs
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 242
minimum : 1
quantity
unit price
price
1
7.86
7.86
10
5.34
53.4
450
3.35
1507.5
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220AB
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    18.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    110mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id
    4.1V @ 1.8mA
  • Gate Charge (Qg) (Max) @ Vgs
    14.4 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    818 pF @ 400 V
  • Power Dissipation (Max)
    65.8W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

{{ boxName }} ({{ dataList?.length || 0 }} Items)

{{ val.part_number }}

{{ val.manufacturer || val.en_manufacturer || '' }}

quantity: {{ val.quantity }}

submit

it was empty.