collect compare
TP65H100G4LSGB-TR
Part number：
TP65H100G4LSGB-TR
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Transphorm
describe：
Hi Volt FETs
sales volume：
0
package：
Tape & Reel (TR)
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 0
minimum : 3000
quantity
unit price
price
3000
2.875
8625
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    8-VDFN Exposed Pad
  • Supplier Device Package
    8-PQFN (8x8)
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    18.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    110mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id
    4.1V @ 1.8mA
  • Gate Charge (Qg) (Max) @ Vgs
    14.4 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    818 pF @ 400 V
  • Power Dissipation (Max)
    65.8W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

{{ boxName }} ({{ dataList?.length || 0 }} Items)

{{ val.part_number }}

{{ val.manufacturer || val.en_manufacturer || '' }}

quantity: {{ val.quantity }}

submit

it was empty.