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TP65H070LDG-TR
Part number：
TP65H070LDG-TR
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Transphorm
describe：
650 V 25 A GAN FET
sales volume：
0
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 630
minimum : 1
quantity
unit price
price
1
14.45
14.45
10
10.155
101.55
100
9.1035
910.35
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    3-PowerDFN
  • Supplier Device Package
    3-PQFN (8x8)
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    85mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id
    4.8V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs
    9.3 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    600 pF @ 400 V
  • Power Dissipation (Max)
    96W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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