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TP65H070G4PS
Part number：
TP65H070G4PS
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Transphorm
describe：
GANFET N-CH 650V 29A TO220
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1257
minimum : 1
quantity
unit price
price
1
9.83
9.83
50
8.9148
445.74
100
5.0245
502.45
500
4.5
2250
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220AB
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    85mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id
    4.7V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs
    9 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    638 pF @ 400 V
  • Power Dissipation (Max)
    96W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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