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TP65H050G4YS
Part number：
TP65H050G4YS
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Transphorm
describe：
650 V 35 A GAN FET HIGH VOLTAGE
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
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inventory 321
minimum : 1
quantity
unit price
price
1
11.33
11.33
10
8.936
89.36
450
8.46249
3808.1205
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    TO-247-4L
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    60mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id
    4.8V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs
    24 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1000 pF @ 400 V
  • Power Dissipation (Max)
    132W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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