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TK125U60Z1,RQ
Part number：
TK125U60Z1,RQ
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Toshiba Semiconductor and Storage
describe：
N-CH MOSFET, 600 V, 0.125 @10V,
sales volume：
0
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 4000
minimum : 1
quantity
unit price
price
1
3.83
3.83
10
2.507
25.07
100
1.7577
175.77
500
1.5606
780.3
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    150°C
  • Package / Case
    8-PowerSFN
  • Supplier Device Package
    TOLL
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    600 V
  • Current - Continuous Drain (Id) @ 25°C
    20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    125mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs
    28 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1620 pF @ 300 V
  • Power Dissipation (Max)
    150W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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