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SISS26LDN-T1-UE3
Part number：
SISS26LDN-T1-UE3
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Vishay Siliconix
describe：
N-CHANNEL 60 V (D-S) 150C MOSFET
sales volume：
0
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 6000
minimum : 1
quantity
unit price
price
1
1.68
1.68
10
1.063
10.63
100
0.711
71.1
500
0.56026
280.13
1000
0.51174
511.74
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    PowerPAK® 1212-8S
  • Supplier Device Package
    PowerPAK® 1212-8S
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    60 V
  • Current - Continuous Drain (Id) @ 25°C
    23.7A (Ta), 81.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Rds On (Max) @ Id, Vgs
    4.3mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    48 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1980 pF @ 30 V
  • Power Dissipation (Max)
    4.8W (Ta), 57W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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