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SIR5810DP-T1-RE3
Part number：
SIR5810DP-T1-RE3
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Vishay Siliconix
describe：
N-CHANNEL 80 V (D-S) MOSFET 150C
sales volume：
0
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 5970
minimum : 1
quantity
unit price
price
1
1.49
1.49
10
0.942
9.42
100
0.6267
62.67
500
0.49128
245.64
1000
0.44769
447.69
2000
0.4284
856.8
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    PowerPAK® SO-8
  • Supplier Device Package
    PowerPAK® SO-8
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    80 V
  • Current - Continuous Drain (Id) @ 25°C
    15.5A (Ta), 53.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    7.5V, 10V
  • Rds On (Max) @ Id, Vgs
    10mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    18.5 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    900 pF @ 40 V
  • Power Dissipation (Max)
    3W (Ta), 56.8W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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