collect compare
SIR580DP-T1-BE3
Part number:
SIR580DP-T1-BE3
manufacturer:
describe:
N-CHANNEL 80 V (D-S) MOSFET 150C
sales volume:
0
package:
Cut Tape (CT)
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 6000
minimum : 1
quantity
unit price
price
1
2.81
2.81
10
1.817
18.17
100
1.2507
125.07
500
1.0524
526.2
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    PowerPAK® SO-8
  • Supplier Device Package
    PowerPAK® SO-8
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    80 V
  • Current - Continuous Drain (Id) @ 25°C
    35.8A (Ta), 146A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    7.5V, 10V
  • Rds On (Max) @ Id, Vgs
    2.7mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    76 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    4100 pF @ 40 V
  • Power Dissipation (Max)
    6.25W (Ta), 104W (Tc)
  • FET Feature
    -