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SIJ5623DP-T1-GE3
Part number:
SIJ5623DP-T1-GE3
manufacturer:
describe:
P-CHANNEL 60 V (D-S) MOSFET 150C
sales volume:
0
package:
Cut Tape (CT)
ROHS status:
Yes
currency:
USD
PDF:
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inventory 6000
minimum : 1
quantity
unit price
price
1
2.37
2.37
10
1.525
15.25
100
1.04
104
500
0.83232
416.16
1000
0.81396
813.96
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    PowerPAK® SO-8
  • Supplier Device Package
    PowerPAK® SO-8
  • FET Type
    P-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    60 V
  • Current - Continuous Drain (Id) @ 25°C
    9.3A (Ta), 26.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Rds On (Max) @ Id, Vgs
    24mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id
    2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    33 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1575 pF @ 30 V
  • Power Dissipation (Max)
    4.1W (Ta), 32.9W (Tc)
  • FET Feature
    -