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SIHG125N65E-GE3
Part number：
SIHG125N65E-GE3
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Vishay Siliconix
describe：
E SERIES POWER MOSFET 650 V (D-
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 494
minimum : 1
quantity
unit price
price
1
8.97
8.97
10
6.139
61.39
100
5.4537
545.37
500
4.70134
2350.67
1000
4.21015
4210.15
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AC
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    120mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    57 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1938 pF @ 100 V
  • Power Dissipation (Max)
    208W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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