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SIEH4800EW-T1-GE3
Part number：
SIEH4800EW-T1-GE3
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Vishay Siliconix
describe：
N-CHANNEL 80 V (D-S) 175 C MOSFE
sales volume：
0
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 3000
minimum : 1
quantity
unit price
price
1
6.18
6.18
10
4.146
41.46
100
3.339
333.9
500
3.01732
1508.66
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    8-PowerDFN
  • Supplier Device Package
    PowerPAK® 8 x 8 BWL
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    80 V
  • Current - Continuous Drain (Id) @ 25°C
    34A (Ta), 381A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    7.5V, 10V
  • Rds On (Max) @ Id, Vgs
    1.15mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    278 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    29000 pF @ 40 V
  • Power Dissipation (Max)
    3.4W (Ta), 417W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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