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S3M0025120J
Part number：
S3M0025120J
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
SMC Diode Solutions
describe：
MOSFETS SILICON CARBIDES 1200V 2
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 0
minimum : 1
quantity
unit price
price
1
14.35
14.35
10
10.077
100.77
100
7.6687
766.87
500
7.36824
3684.12
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package
    TO-263-7
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V
  • Rds On (Max) @ Id, Vgs
    32mOhm @ 48A, 18V
  • Vgs(th) (Max) @ Id
    4V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs
    175 nC @ 18 V
  • Vgs (Max)
    +18V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds
    3519 pF @ 1000 V
  • Power Dissipation (Max)
    517W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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