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NXVF6532M3TG01
Part number:
NXVF6532M3TG01
manufacturer:
describe:
SIC POWER MOSFET MODULE 650V, 32
sales volume:
0
package:
Tube
ROHS status:
Yes
currency:
USD
PDF:
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specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Power - Max
    65.2W (Tj)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    13-SSIP Exposed Pad, Formed Leads
  • Supplier Device Package
    APM16
  • Technology
    Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss)
    650V
  • Current - Continuous Drain (Id) @ 25°C
    31A (Tc)
  • Rds On (Max) @ Id, Vgs
    44mOhm @ 15A, 18V
  • Vgs(th) (Max) @ Id
    4V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs
    58nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds
    1215pF @ 400V
  • Configuration
    4 N-Channel (Full Bridge)
  • FET Feature
    -