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MXP120A045FE-T1GE3
Part number：
MXP120A045FE-T1GE3
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Vishay Siliconix
describe：
SIC MOSFET
sales volume：
0
package：
Tape & Reel (TR)
ROHS status：
Yes
currency：
USD
PDF:
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inventory 0
minimum : 1600
quantity
unit price
price
1600
12.67559
20280.944
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    -
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    -
  • Supplier Device Package
    -
  • FET Type
    N-Channel
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V, 20V
  • Rds On (Max) @ Id, Vgs
    56mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id
    2.38V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs
    75.6 nC @ 18 V
  • Vgs (Max)
    +22V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    1958 pF @ 800 V
  • Power Dissipation (Max)
    212W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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