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IXSJ25N120R1
Part number：
IXSJ25N120R1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
IXYS
describe：
1200V 62M (25A @ 25C) SIC MOSFET
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 0
minimum : 1
quantity
unit price
price
1
13.58
13.58
30
8.249
247.47
120
7.08058
849.6696
510
6.86251
3499.8801
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    ISO247-3L
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V
  • Rds On (Max) @ Id, Vgs
    81mOhm @ 12A, 18V
  • Vgs(th) (Max) @ Id
    4.8V @ 5.3mA
  • Gate Charge (Qg) (Max) @ Vgs
    52 nC @ 18 V
  • Vgs (Max)
    +21V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds
    1435 pF @ 800 V
  • Power Dissipation (Max)
    75.3W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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