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IV2Q12040D7Z
Part number:
IV2Q12040D7Z
manufacturer:
describe:
GEN2, SIC MOSFET, 1200V 40MOHM,
sales volume:
0
package:
Strip
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 60
minimum : 1
quantity
unit price
price
1
10.78
10.78
10
7.447
74.47
100
5.5668
556.68
500
5.075
2537.5
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-7
  • Supplier Device Package
    TO-263-7
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V
  • Rds On (Max) @ Id, Vgs
    52mOhm @ 20A, 18V
  • Vgs(th) (Max) @ Id
    4.5V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs
    110 nC @ 18 V
  • Vgs (Max)
    +20V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds
    2160 pF @ 800 V
  • Power Dissipation (Max)
    417W (Tc)
  • FET Feature
    -