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IV2Q06025D7Z
Part number：
IV2Q06025D7Z
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Inventchip
describe：
GEN 2, SIC MOSFET, 650V 25MOHM,
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 0
minimum : 800
quantity
unit price
price
800
5.9875
4790
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-7
  • Supplier Device Package
    TO-263-7
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    111A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V
  • Rds On (Max) @ Id, Vgs
    33mOhm @ 40A, 18V
  • Vgs(th) (Max) @ Id
    4.5V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs
    125 nC @ 18 V
  • Vgs (Max)
    +20V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds
    3090 pF @ 600 V
  • Power Dissipation (Max)
    600W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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