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IV1Q12030T4G
Part number：
IV1Q12030T4G
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Inventchip
describe：
SIC MOSFET, 1200V 30MOHM, TO247-
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 0
minimum : 120
quantity
unit price
price
120
8.48383
1018.0596
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    TO-247-4
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    40mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id
    5V @ 9.4mA
  • Gate Charge (Qg) (Max) @ Vgs
    168 nC @ 20 V
  • Vgs (Max)
    +20V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds
    3980 pF @ 800 V
  • Power Dissipation (Max)
    410W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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