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IRF610
Part number：
IRF610
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Vishay Siliconix
describe：
MOSFET N-CH 200V 3.3A TO220AB
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
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inventory 1600
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specifications
  • Part Status
    Obsolete
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220AB
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    200 V
  • Current - Continuous Drain (Id) @ 25°C
    3.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    1.5Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    8.2 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    140 pF @ 25 V
  • Power Dissipation (Max)
    36W (Tc)
  • FET Feature
    -
  • 2853923259
  • 86 13510600013
  • +86 13510600013；+86 13316843580

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