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IPB175N20NM6ATMA1
Part number：
IPB175N20NM6ATMA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IPB175N20NM6ATMA1
sales volume：
0
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 0
minimum : 1
quantity
unit price
price
1
3.74
3.74
10
2.446
24.46
100
1.7126
171.26
500
1.51164
755.82
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    PG-TO263-3-U01
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    200 V
  • Current - Continuous Drain (Id) @ 25°C
    9.7A (Ta), 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V, 15V
  • Rds On (Max) @ Id, Vgs
    15.5mOhm @ 38A, 15V
  • Vgs(th) (Max) @ Id
    4.5V @ 105µA
  • Gate Charge (Qg) (Max) @ Vgs
    39 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    3100 pF @ 100 V
  • Power Dissipation (Max)
    3.8W (Ta), 203W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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