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IMZA120R053M2HXKSA1
Part number：
IMZA120R053M2HXKSA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IMZA120R053M2HXKSA1
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 0
minimum : 1
quantity
unit price
price
1
9.7
9.7
30
5.736
172.08
120
4.867
584.04
510
4.599
2345.49
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    PG-TO247-4-8
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    15V, 18V
  • Rds On (Max) @ Id, Vgs
    69mOhm @ 13A, 18V
  • Vgs(th) (Max) @ Id
    5.1V @ 4.1mA
  • Gate Charge (Qg) (Max) @ Vgs
    30 nC @ 18 V
  • Vgs (Max)
    +23V, -7V
  • Input Capacitance (Ciss) (Max) @ Vds
    1010 pF @ 800 V
  • Power Dissipation (Max)
    182W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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