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IMZA120R022M2HXKSA1
Part number：
IMZA120R022M2HXKSA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IMZA120R022M2HXKSA1
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 0
minimum : 1
quantity
unit price
price
1
16.02
16.02
30
9.89767
296.9301
120
8.83733
1060.4796
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    PG-TO247-4-8
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    15V, 18V
  • Rds On (Max) @ Id, Vgs
    29mOhm @ 32A, 18V
  • Vgs(th) (Max) @ Id
    5.1V @ 10.1mA
  • Gate Charge (Qg) (Max) @ Vgs
    71 nC @ 18 V
  • Vgs (Max)
    +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    2330 pF @ 800 V
  • Power Dissipation (Max)
    329W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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