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GCMS008C120S1-E1
Part number：
GCMS008C120S1-E1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
SemiQ
describe：
GEN3 1200V 8M SIC MOSFET & SBD
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 29
minimum : 1
quantity
unit price
price
1
42.09
42.09
10
31.499
314.99
100
28.825
2882.5
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Chassis Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    SOT-227-4, miniBLOC
  • Supplier Device Package
    SOT-227
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    189A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V
  • Rds On (Max) @ Id, Vgs
    12mOhm @ 100A, 18V
  • Vgs(th) (Max) @ Id
    4V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs
    506 nC @ 18 V
  • Vgs (Max)
    +22V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds
    14085 pF @ 1000 V
  • Power Dissipation (Max)
    536W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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