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GC210N80FE
Part number：
GC210N80FE
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Goford Semiconductor
describe：
MOSFET N-CH 800V ESD 17A 51W TO-
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 50
minimum : 1
quantity
unit price
price
1
4.2
4.2
10
2.768
27.68
100
1.9513
195.13
500
1.60288
801.44
1000
1.49097
1490.97
2000
1.449
2898
specifications
  • Part Status
    Active
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    8-PowerSMD, Flat Leads
  • Supplier Device Package
    8-DFN (5x6)
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    800 V
  • Current - Continuous Drain (Id) @ 25°C
    17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    210mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id
    3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    50 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    2200 pF @ 380 V
  • Power Dissipation (Max)
    51W (Tc)
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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