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GC085N65QF
Part number：
GC085N65QF
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Goford Semiconductor
describe：
MOSFET N-CH 650V 40A 299W TO-247
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 50
minimum : 1
quantity
unit price
price
1
5.25
5.25
10
3.491
34.91
100
2.4946
249.46
500
2.06982
1034.91
1000
1.953
1953
specifications
  • Part Status
    Active
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    8-SOP
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    85mOhm @ 21.5A, 10V
  • Vgs(th) (Max) @ Id
    4.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    76 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    2350 pF @ 400 V
  • Power Dissipation (Max)
    299W (Tc)
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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