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G3F25MT12J-TR
Part number：
G3F25MT12J-TR
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
GeneSiC Semiconductor
describe：
1200V 25M TO-263-7 G3F SIC MOSFE
sales volume：
0
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 799
minimum : 1
quantity
unit price
price
1
17.69
17.69
10
14.271
142.71
100
13.77
1377
specifications
  • Part Status
    Active
  • Grade
    Automotive
  • Qualification
    AEC-Q101
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package
    TO-263-7
  • FET Type
    N-Channel
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    87A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V
  • Rds On (Max) @ Id, Vgs
    34mOhm @ 34A, 18V
  • Vgs(th) (Max) @ Id
    4.3V @ 24mA
  • Gate Charge (Qg) (Max) @ Vgs
    128 nC @ 18 V
  • Vgs (Max)
    +22V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    3325 pF @ 800 V
  • Power Dissipation (Max)
    362W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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