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G1K1P10TE
Part number:
G1K1P10TE
manufacturer:
describe:
MOSFET P-CH 100V 24A 88W TO-220
sales volume:
0
package:
Tube
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 50
minimum : 1
quantity
unit price
price
1
1.38
1.38
10
0.871
8.71
100
0.5773
57.73
500
0.45104
225.52
1000
0.4104
410.4
2000
0.37622
752.44
5000
0.33922
1696.1
10000
0.31637
3163.7
specifications
  • Part Status
    Active
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package
    TO-252
  • FET Type
    P-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    100 V
  • Current - Continuous Drain (Id) @ 25°C
    24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Rds On (Max) @ Id, Vgs
    110mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    65 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    3300 pF @ 50 V
  • Power Dissipation (Max)
    88W (Tc)