collect compare
G120P06T
Part number：
G120P06T
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Goford Semiconductor
describe：
MOSFET P-CH 60V -120A 277W TO-22
sales volume：
0
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 50
minimum : 1
quantity
unit price
price
1
2.2
2.2
10
1.408
14.08
100
0.9563
95.63
500
0.76272
381.36
1000
0.70047
700.47
2000
0.64813
1296.26
5000
0.5985
2992.5
specifications
  • Part Status
    Active
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    8-SOP
  • FET Type
    P-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    60 V
  • Current - Continuous Drain (Id) @ 25°C
    120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    8.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    230 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    12674 pF @ 30 V
  • Power Dissipation (Max)
    277W (Tc)
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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