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FCP165N65S3R0
Part number:
FCP165N65S3R0
describe:
FCP165N65S3R0 - POWER MOSFET, N-
sales volume:
0
package:
Bulk
ROHS status:
Yes
currency:
USD
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inventory 2115
minimum : 151
quantity
unit price
price
151
2
302
specifications
  • Part Status
    Obsolete
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220-3
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    165mOhm @ 9.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 440mA
  • Gate Charge (Qg) (Max) @ Vgs
    39 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1500 pF @ 400 V
  • Power Dissipation (Max)
    154W (Tc)
  • FET Feature
    -