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EPC7014UBC
Part number：
EPC7014UBC
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
EPC Space, LLC
describe：
GAN FET HEMT 60V 1A COTS 4UB
sales volume：
0
package：
Bulk
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1690
minimum : 1
quantity
unit price
price
1
181.89
181.89
10
167.64
1676.4
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    4-SMD, No Lead
  • Supplier Device Package
    4-SMD
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    60 V
  • Current - Continuous Drain (Id) @ 25°C
    1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    5V
  • Rds On (Max) @ Id, Vgs
    580mOhm @ 1A, 5V
  • Vgs(th) (Max) @ Id
    2.5V @ 140µA
  • Vgs (Max)
    +7V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds
    22 pF @ 30 V
  • Power Dissipation (Max)
    -
  • FET Feature
    -
  • 2853923259
  • 86 13510600013
  • +86 13510600013；+86 13316843580

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