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EPC2367
Part number:
EPC2367
manufacturer:
describe:
TRANS GAN 100V DIE,1.5 MOHM, 5PI
sales volume:
0
package:
Cut Tape (CT)
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 0
minimum : 1
quantity
unit price
price
1
6.89
6.89
10
4.649
46.49
100
3.4425
344.25
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount, Wettable Flank
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Package / Case
    5-PowerWQFN
  • Supplier Device Package
    5-QFN (3.3x3.3)
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    100 V
  • Current - Continuous Drain (Id) @ 25°C
    78A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On)
    5V
  • Rds On (Max) @ Id, Vgs
    1.2mOhm @ 30A, 5V
  • Vgs(th) (Max) @ Id
    2.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs
    17 nC @ 5 V
  • Vgs (Max)
    +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds
    2170 pF @ 50 V
  • Power Dissipation (Max)
    -
  • FET Feature
    -