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ECB4R3M12YM3
Part number：
ECB4R3M12YM3
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Wolfspeed, Inc.
describe：
SIC, MODULE, 4.3M, 1200V, 152MM,
sales volume：
0
package：
Box
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1
minimum : 1
quantity
unit price
price
1
1050
1050
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Chassis Mount
  • Power - Max
    1.1kW (Tj)
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    Module
  • Supplier Device Package
    -
  • Technology
    Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss)
    1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C
    385A
  • Rds On (Max) @ Id, Vgs
    5.5mOhm @ 350A, 15V
  • Vgs(th) (Max) @ Id
    3.6V @ 84mA
  • Gate Charge (Qg) (Max) @ Vgs
    848nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds
    25600pF @ 800V
  • Configuration
    6 N-Channel (Three Phase Inverter)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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