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E3M0900170J-TR
Part number:
E3M0900170J-TR
manufacturer:
describe:
SIC, MOSFET, 900M, 1700V, TO-263
sales volume:
0
package:
Cut Tape (CT)
ROHS status:
Yes
currency:
USD
PDF:
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inventory 0
minimum : 1
quantity
unit price
price
1
6.78
6.78
10
4.55
45.5
100
3.2842
328.42
specifications
  • Part Status
    Active
  • Grade
    Automotive
  • Qualification
    AEC-Q101
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package
    TO-263-7
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1700 V
  • Current - Continuous Drain (Id) @ 25°C
    4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Rds On (Max) @ Id, Vgs
    1.25Ohm @ 1.99A, 15V
  • Vgs(th) (Max) @ Id
    4.2V @ 550µA
  • Gate Charge (Qg) (Max) @ Vgs
    8 nC @ 15 V
  • Vgs (Max)
    +19V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds
    202 pF @ 1.2 kV
  • Power Dissipation (Max)
    41W (Tc)
  • FET Feature
    -