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CMS120N080B
Part number：
CMS120N080B
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Bruckewell
describe：
SIC N-MOSFET,1200V,35A,TO-263-7L
sales volume：
0
package：
Bulk
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 0
minimum : 1
quantity
unit price
price
1
18.18
18.18
10
12.948
129.48
100
10
1000
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-7, D2PAK (6 Leads + Tab)
  • Supplier Device Package
    TO-263-7
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    90mOhm @ 10A, 20V
  • Vgs(th) (Max) @ Id
    4V @ 10mA
  • Vgs (Max)
    +20V, -5V
  • Power Dissipation (Max)
    188W (Tc)
  • FET Feature
    -
  • QQ: 2853923259
  • +86 13510600013
  • 86 13510600013

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