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CAB3R5M12DM4
Part number:
CAB3R5M12DM4
manufacturer:
describe:
SIC MODULE
sales volume:
0
package:
Box
ROHS status:
Yes
currency:
USD
PDF:
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inventory 8
minimum : 1
quantity
unit price
price
1
601.37
601.37
10
591.25
5912.5
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Chassis Mount
  • Power - Max
    980W (Tc)
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    Module
  • Supplier Device Package
    -
  • Technology
    Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss)
    1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C
    383A (Tc)
  • Rds On (Max) @ Id, Vgs
    4.6mOhm @ 311A, 15V
  • Vgs(th) (Max) @ Id
    3.6V @ 81mA
  • Gate Charge (Qg) (Max) @ Vgs
    1044nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds
    29000pF @ 800V
  • Configuration
    2 N-Channel (Half Bridge)
  • FET Feature
    -