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specifications
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Part Status
Active
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Grade
-
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Qualification
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Mounting Type
Chassis Mount
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Power - Max
980W (Tc)
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Operating Temperature
-40°C ~ 175°C (TJ)
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Package / Case
Module
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Supplier Device Package
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Technology
Silicon Carbide (SiC)
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Drain to Source Voltage (Vdss)
1200V (1.2kV)
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Current - Continuous Drain (Id) @ 25°C
383A (Tc)
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Rds On (Max) @ Id, Vgs
4.6mOhm @ 311A, 15V
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Vgs(th) (Max) @ Id
3.6V @ 81mA
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Gate Charge (Qg) (Max) @ Vgs
1044nC @ 15V
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Input Capacitance (Ciss) (Max) @ Vds
29000pF @ 800V
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Configuration
2 N-Channel (Half Bridge)
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FET Feature
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