collect compare
C3M0900170M
Part number:
C3M0900170M
manufacturer:
describe:
SIC, MOSFET, 900M, 1700V, TO-247
sales volume:
0
package:
Tube
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 312
minimum : 1
quantity
unit price
price
1
6.52
6.52
30
3.69467
110.8401
120
3.07267
368.7204
510
2.61669
1334.5119
1020
2.45034
2499.3468
2010
2.3133
4649.733
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-3P-3 Full Pack
  • Supplier Device Package
    TO-3PF-3L
  • FET Type
    N-Channel
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss)
    1700 V
  • Current - Continuous Drain (Id) @ 25°C
    4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Rds On (Max) @ Id, Vgs
    1.25Ohm @ 1.99A, 15V
  • Vgs(th) (Max) @ Id
    4.2V @ 550µA
  • Gate Charge (Qg) (Max) @ Vgs
    10 nC @ 15 V
  • Vgs (Max)
    +20V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds
    202 pF @ 1.2 kV
  • Power Dissipation (Max)
    33W (Tc)
  • FET Feature
    -