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AS2M040120P
Part number：
AS2M040120P
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
ANBON SEMICONDUCTOR (INT'L) LIMITED
describe：
N-CHANNEL SILICON CARBIDE POWER
sales volume：
0
package：
Bulk
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 1650
minimum : 1
quantity
unit price
price
1
22.69
22.69
30
14.42
432.6
120
13.27
1592.4
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247-3
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    55mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id
    4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs
    142 nC @ 20 V
  • Vgs (Max)
    +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    2946 pF @ 1000 V
  • Power Dissipation (Max)
    330W (Tc)
  • FET Feature
    -
  • 2853923259
  • 86 13510600013
  • +86 13510600013；+86 13316843580

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